samwin sw 640 rev0.2 05.6.9 features n-channel mosfet bv dss (minimum) r ds(on) (maximum) i d qg (typical) p d (@tc=25 ) general description this power mosfet is produced in samwin with advanced vdmos process, planar stripe.this technology enable power mosfet to have better characteristics, such as fast switching time, low o n resistance, low gate charge and especially excellen t avalanche characteristics. it is mainly suitable fo r half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. absolute maximum ratings 300 maximum lead temperature for soldering purpose, 1/ 8 from case for 5 seconds. t l -55~+150 operating junction temperature &storage temperature t stg ,t j w/ 1.10 derating factor above 25 w 139 total power dissipation (@tc=25 ) p d v/ns 5.5 peak diode recovery dv/dt (note 3) dv/dt mj 13.9 repetitive avalanche energy (note 1) e ar mj 250 single pulsed avalanche energy (note 2) e as v f 30 gate to source voltage v gs a 72 drain current pulsed (note 1) i dm a 11.4 continuous drain current (@tc=100 ) a 18 continuous drain current (@tc=25 ) i d v 200 drain to source voltage v dss units value parameter symbol thermal characteristics / w 62.5 - - thermal resistance, junction-to-ambient r ? ja / w 0.5 - - thermal resistance, case-to-sink r ? cs / w 0.9 - - thermal resistance, junction-to-case r ? jc max typ min units value parameter symbol 1/6 : 200 v : 0.18 ohm : 18a : 40 nc : 139 w g s d
samwin sw 640 rev0.2 05.6.9 2/6 electrical characteristics (tc=25 unless otherwise noted) - 21 - gate-drain charge (miller charge) q gd - 6 - gate-source charge q gs nc 55 40 - v ds =320v,v gs =10v, i d =6.5a (note4,5) total gate charge q g 200 70 - fall time t f 300 150 - turn-off delay time t d(off) 230 80 - rise time t r n s 50 25 - v dd =200v,i d =6.5a r g =50ohm (note4,5) turn-on delay time t d(on) dynamic characteristics 60 45 - reverse transfer capacitance crss 240 180 - output capacitance coss pf 1750 1350 - v gs =0v,v ds =25v, f=1mhz input capacitance ciss dynamic characteristics ohm 0.18 0.15 - v gs =10v,i d =3.25a static drain-source on-state resistance r ds(on) v 4.0 - 2.0 v ds =v gs ,i d =250ua gate threshold voltage v gs (th) on characteristics na -100 - - v gs =-30v, v ds =0v gate-source leakage reverse na 100 - - v gs =30v,v ds =0v gate-source leakage current i gss v ds =160v, tc=125 ua 1 - - v ds =200v, v gs =0v drain-source leakage current i dss v/ - 0.2 - i d =250ua,referenced to 25 breakdown voltage temperature coefficient ? bv dss / ? tj v - - 200 v gs =0v,i d =250ua drain- source breakdown voltage bv dss off characteristics max typ min units value test conditions parameter symbol source-drain diode ratings and characteristics uc - 1.47 - reverse recovery charge q rr ns - 195 - i s =6.5a,v gs =0v, di f /dt=100a/us reverse recovery time t rr v 1.5 - - i s =6.5a,v gs =0v diode forward voltage v sd 72 - - pulsed source current i sm a 18 - - integral reverse p-n junction diode in the mosfet continuous source current i s unit. max. typ. min. test conditions parameter symbol notes 1. repeativity rating: pulse width limited by junct ion temperature 2. l = 18.6mh,i as =18a,v dd =50v,rg=0ohm, starting tj=25 3. i sd 0 18a,di/dt 0 100a/us,v dd 0 bv dss , starting tj=25 4. pulse test: pulse width 0 300us,duty cycle 0 2% 5. essentially independent of operating temperature .
samwin sw 640 rev0.2 05.6.9 3/6 fig 1. on-state characteristics fig 3. on resistance variation vs. drain current and gate voltage fig 4. on state current vs. allowable case temperature fig 2. transfer characteristics fig 6. gate charge characteristics fig 5. capacitance characteristics (non-repetitve) 2 4 6 8 10 0.1 1 10 25 o c 150 o c ? ?? ? note: 1.v ds =50v 2.250us pulse test. i d ,drain current [a] v gs , gate-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 150 o c 25 o c i dr ,reverse drain current[a] v sd ,source-drain voltage[v] ? ? ? ? note: 1.v gs =0v 2.250us test 0 10 20 30 40 50 0 2 4 6 8 10 12 note:i d =18a v gs ,gate-source voltage [v] q g ,total gate charge [nc] v ds =160v v ds =100v v ds =40v 0 10 20 30 40 50 60 0.0 0.2 0.4 0.6 0.8 1.0 v gs =10v v gs =20v ? ?? ? note:t j =25 o c r ds(on) drain-source on-resistance[ohm] i d , drain current[a] 0.1 1 10 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 capacitance [pf] v ds ,drain-source voltage [v] c rss c oss c iss ? ?? ? note: 1.v gs =0v 2.f=1mhz. ciss = cgs+cgd(cds=shorted) coss= cds+cgd crss = cgd 0.1 1 10 0.1 1 10 i d ,drain current [a] v ds ,drain-to-source voltage [v] ? ?? ? note: 1.250us pulse test 2.t c = 25 o c v gs top:10v 9v 8v 7v 6v 5.5v 5v bottom:5.0v
samwin sw 640 rev0.2 05.6.9 4/6 fig 7. breakdown voltage variation vs. junction temperature fig 8. on-resistance variation vs. junction temperature fig 11. transient thermal response curve fig 10. maximum drain current vs. case temperature fig9. maximum safe operating -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ? ?? ? note: 1.v gs =0v 2.i d =250u a t j ,junction temperatur [ o c] bv dss [normalized] drain-source breakdown voltage -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? ?? ? note: 1.v gs =10v 2.i d =9a t j ,junction temperature[ o c] r ds(on) (normalized) drain-source on-resistance 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 ? ?? ? note: 1.tc=25 c 2.tj=150 c 3.single pulse operation in this area limted by r ds(on) 10ms 1ms 100us 10us v d ,drain-source voltage[v] i d , drain current[a] 25 50 75 100 125 150 0 4 8 12 16 20 t c ,case temperature [ o c] i d, drain current[a] 1 e - 5 1 e - 4 1 e - 3 0 . 0 1 0 . 1 1 1 0 0 . 0 1 0 . 1 1 s i n g l e p u l s e d = 0 . 5 0 . 2 0 . 1 0 . 0 5 0 . 0 2 z jc (t),thermal response t 1 , s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) ? ? ? ? n o t e : 1 . z ? j c ( t ) = 0 . 9 o c / w m a x 2 . d u t y f a c t o r , d = t 1 / t 2 3 . t j - t c = p d m * z ? j c ( t ) 0 . 0 1
samwin sw 640 rev0.2 05.6.9 5/6 time v ds (t) q gd q gs v gs 10v charge q g dut 1ma same type as dut 200nf 50k ? 300nf v gs v ds fig 12. gate charge test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms fig 13. switching test circuit & waveforms v dd (0.5 rated v ds ) v ds v in 90% 10% t d(on) t r t on t d(off) t f t off v ds 10v r g dut r l pulse generator v dd t p v ds l r g dut 10v bv dss i as i d (t) v dd eas= --- l l i as 2 --------------- bv dss bv dss -v dd 1 2
|
